參數(shù)資料
型號(hào)： BD330
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： PNP power transistor(PNP功率晶體管)
中文描述： 3 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-126
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 44K
代理商： BD330
1999 Apr 26
3
Philips Semiconductors
Product specification
PNP power transistor
BD330
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
in free air
100
7
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
85
40
TYP.
600
100
MAX.
100
10
100
375
0.5
1.2
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
32 V
I
E
= 0; V
CB
=
32 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
5 mA; V
CE
=
10 V
I
C
=
0.5 A; V
CE
=
1 V; see Fig.2
I
C
=
2 A; V
CE
=
1 V; see Fig.2
I
C
=
2 A; I
B
=
0.2 A
I
C
=
5 mA; V
CE
=
10 V
I
C
=
2 A; V
CE
=
1 V
I
C
=
50 mA; V
CE
=
5 V;
f = 100 MHz
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
V
BE
collector-emitter saturation voltage
base-emitter voltage
V
mV
V
MHz
f
T
transition frequency
handbook, full pagewidth
0
10
1
200
hFE
100
300
MGD845
1
IC (mA)
10
10
2
10
4
10
3
Fig.2 DC current gain; typical values.
V
CE
=
1 V.
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