參數(shù)資料
型號： BD138-16
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： PNP power transistors
中文描述： 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝： PLASTIC, TO-126, 3 PIN
文件頁數(shù)： 3/8頁
文件大?。?/td> 44K
代理商： BD138-16
1999 Apr 12
3
Philips Semiconductors
Product specification
PNP power transistors
BD136; BD138; BD140
THERMAL CHARACTERISTICS
Note
1.
Refer to TO-126 (SOT32) standard mounting conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
note 1
100
10
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
100
10
100
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
30 V
I
E
= 0; V
CB
=
30 V; T
j
= 125
°
C
I
C
= 0; V
EB
=
5 V
V
CE
=
2 V; (see Fig.2)
I
C
=
5 mA
I
C
=
150 mA
I
C
=
500 mA
I
C
=
150 mA; V
CE
=
2 V;
(see Fig.2)
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
40
63
25
250
DC current gain
BD136-10; BD138-10; BD140-10
BD136-16; BD138-16; BD140-16
collector-emitter saturation voltage
base-emitter voltage
transition frequency
63
100
160
160
250
0.5
1
V
CEsat
V
BE
f
T
I
C
=
500 mA; I
B
=
50 mA
I
C
=
500 mA; V
CE
=
2 V
I
C
=
50 mA; V
CE
=
5 V;
f = 100 MHz
I
C
= 150 mA;
V
CE
= 2 V
V
V
MHz
DC current gain ratio of the
complementary pairs
1.3
1.6
h
h
FE2
-----------
相關(guān)PDF資料
PDF描述
BD140-10 PNP power transistors
BD140-16 PNP power transistors
BD136-25 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-126
BD138-25 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:3mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
BD140.10 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):1A; Gate Trigger Current (QI), Igt:10mA; Current, It av:1A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD13816S 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD13816STU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD138-25 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
BD1386 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Medium Power Linear and Switching Applications
BD138-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON TRANSISTORS
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