參數(shù)資料
型號: BD140-16
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: PNP power transistors
中文描述: 1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝: PLASTIC, TO-126, 3 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 44K
代理商: BD140-16
DATA SHEET
Product specification
Supersedes data of 1997 Mar 26
1999 Apr 12
DISCRETE SEMICONDUCTORS
BD136; BD138; BD140
PNP power transistors
ok, halfpage
M3D100
相關(guān)PDF資料
PDF描述
BD136-25 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-126
BD138-25 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:3mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
BD140.10 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):1A; Gate Trigger Current (QI), Igt:10mA; Current, It av:1A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes
BD140-25 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126
BD140 PNP power transistor(PNP功率晶體管)
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