參數(shù)資料
型號： BD138-16
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： PNP power transistors
中文描述： 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝： PLASTIC, TO-126, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 44K
代理商： BD138-16
1999 Apr 12
2
Philips Semiconductors
Product specification
PNP power transistors
BD136; BD138; BD140
FEATURES
High current (max. 1.5 A)
Low voltage (max. 80 V).
APPLICATIONS
General purpose power applications, e.g. driver stages
in hi-fi amplifiers and television circuits.
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complements: BD135, BD137 and BD139.
PINNING
PIN
DESCRIPTION
1
2
emitter
collector, connected to metal part of
mounting surface
base
3
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM272
1
2
3
Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BD136
BD138
BD140
collector-emitter voltage
BD136
BD138
BD140
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
45
60
100
V
V
V
V
CEO
open base
65
65
45
60
80
5
1.5
2
1
8
+150
150
+150
V
V
V
V
A
A
A
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
mb
≤
70
°
C
相關(guān)PDF資料
PDF描述
BD140-10 PNP power transistors
BD140-16 PNP power transistors
BD136-25 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-126
BD138-25 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:3mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
BD140.10 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):1A; Gate Trigger Current (QI), Igt:10mA; Current, It av:1A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD13816S 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD13816STU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD138-25 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
BD1386 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Medium Power Linear and Switching Applications
BD138-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON TRANSISTORS
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