參數(shù)資料
型號: BCR5KM8
英文描述: TRIAC|400V V(DRM)|5A I(T)RMS|TO-220AB
中文描述: 可控硅| 400V五(DRM)的| 5A條口(T)的有效值| TO - 220AB現(xiàn)有
文件頁數(shù): 9/10頁
文件大小: 129K
代理商: BCR5KM8
Mar. 2002
temperature 150
°
C (See warning.)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
160
120
100
60
20
0
8
0
1
3
5
7
40
80
140
2
4
6
160
120
100
60
20
0
8
0
1
3
5
7
40
80
140
2
4
6
60 60 t2.3
120 120 t2.3
100 100 t2.3
160
120
100
60
20
0
3.2
0
0.4
1.2
2.0
2.8
40
80
140
0.8
1.6
2.4
10
2
7
5
4
3
2
10
1
7
5
4
3
2
10
0
60
20
20
60
100
140160
40
0
40
80
120
10
3
7
5
3
2
7
5
3
2
7
5
3
2
10
2
10
1
10
0
60
20
20
60
100
160
140
40
0
40
80
120
10
3
7
5
3
2
10
2
10
4
7
5
3
2
10
5
7
5
3
2
10
6
7
5
3
2
60
20
20
60
100
160
140
40
0
40
80
120
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
C
°
C
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
A
°
C
RMS ON-STATE CURRENT (A)
ALL FINS ARE
BLACK PAINTED
ALUMINUM AND
GREASED
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE LOADS
NATURAL CONVECTION
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
A
°
C
RMS ON-STATE CURRENT (A)
NATURALCONVECTION
NO FINS,CURVES
APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
LOADS
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
R
j
°
C
R
j
°
C
TYPICAL EXAMPLE
JUNCTION TEMPERATURE (
°
C)
1
H
j
°
C
H
(
j
°
C
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
L
JUNCTION TEMPERATURE (
°
C)
T
2
+
, G
+
T
2
, G
TYPICAL
EXAMPLE
T
2
+
, G
TYPICAL
EXAMPLE
DISTRIBUTION
DISTRIBUTION
TYPICAL
EXAMPLE
V
D
= 12V
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
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