參數(shù)資料
型號(hào): BCR5KM8
英文描述: TRIAC|400V V(DRM)|5A I(T)RMS|TO-220AB
中文描述: 可控硅| 400V五(DRM)的| 5A條口(T)的有效值| TO - 220AB現(xiàn)有
文件頁數(shù): 10/10頁
文件大?。?/td> 129K
代理商: BCR5KM8
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150
°
C (See warning.)
160
100
80
40
20
0
60
140
60
120
20
20
60
100
160
140
40
0
40
80
120
2 3
10
1
5 710
2
2 3 5 710
3
2 3 5 710
4
120
0
20
40
60
80
100
140
160
2 3
10
1
5 710
2
2 3 5 710
3
2 3 5 710
4
120
0
20
40
60
80
100
140
160
10
0
10
1
2
3 4 5
7
10
2
2
3 4 5
7
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
I
FGT I
I
RGT I
I
RGT III
C
1
C
1
= 0.1~0.47
μ
F
R
1
= 47~100
C
0
= 0.1
μ
F
R
0
= 100
C
0
R
0
R
1
6
6
6
6V
6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
LOAD
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
TYPICAL EXAMPLE
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
T
j
= 125
°
C
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
B
j
°
C
B
j
°
C
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T
j
= 125
°
C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
T
j
= 125
°
C
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T
j
= 150
°
C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER PULSE WIDTH (
μ
s)
1
G
G
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