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參數(shù)資料
| 型號(hào)： | BCR5KM8 |
| 英文描述： | TRIAC|400V V(DRM)|5A I(T)RMS|TO-220AB |
| 中文描述： | 可控硅| 400V五（DRM）的| 5A條口（T）的有效值| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 129K |
| 代理商： | BCR5KM8 |
Mar. 2002
2. Measurement using the gate trigger characteristics measurement circuit.
3. High sensitivity (I
GT
≤
10mA) is also available. (I
GT
item
)
4. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5
°
C/W.
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
R
th (j-a)
T
j
=125
°
C, V
DRM
applied
T
c
=25
°
C, I
TM
=7A, Instantaneous measurement
T
j
=25
°
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
°
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
°
C, V
D
=1/2V
DRM
Junction to case
4
Junction to ambient
Unit
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
2
Gate trigger current
2
Gate non-trigger voltage
Thermal resistance
Thermal resistance
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
15
3
15
3
15
3
—
3.8
50
!
@
#
!
@
#
Min.
—
—
—
—
—
—
—
—
0.2
—
—
mA
V
V
V
V
mA
mA
mA
V
°
C/W
°
C/W
Symbol
Parameter
Test conditions
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
PERFORMANCE CURVES
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
°
C
3.8
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–
1
T
j
= 25
°
C
10
0
2 3
5 7 10
1
40
20
2 3
5 7 10
2
4
4
60
80
100
30
10
50
70
90
0
MAXIMUM ON-STATE
CHARACTERISTICS
O
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
S
CONDUCTION TIME
(CYCLES AT 60Hz)
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