參數(shù)資料
型號(hào): BCR3PM8
英文描述: FUSE BLOCK 3AG 1POS SOLDER
中文描述: 可控硅| 400V五(DRM)的| 3A條口(T)的有效值| TO - 220AB現(xiàn)有
文件頁(yè)數(shù): 8/12頁(yè)
文件大?。?/td> 420K
代理商: BCR3PM8
Mar. 2002
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
2
Gate trigger current
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
T
j
=150
°
C, V
DRM
applied
T
c
=25
°
C, I
TM
=4.5A, Instantaneous measurement
T
j
=25
°
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
°
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
°
C/150
°
C, V
D
=1/2V
DRM
Junction to case
3
T
j
=125
°
C/150
°
C
Unit
mA
V
V
V
V
mA
mA
mA
V
°
C/W
V/
μ
s
Typ.
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
0.2/0.1
5/1
Max.
2.0
1.5
1.5
1.5
1.5
20
5
20
5
20
5
4.5
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5
°
C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (I
GT
10mA) is also available. (I
GT
item
1
)
PERFORMANCE CURVES
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
T
j
=125
°
C/150
°
C
2. Rate of decay of on-state commutating current
(di/dt)
c
=
1.5A/ms
3. Peak off-state voltage
V
D
=400V
The product guaranteed maximum junction
temperature 150
°
C (See warning.)
0.5
1.5
2.5
3.5
1.0
2.0
3.0
4.0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
T
j
= 25
°
C
T
j
= 150
°
C
10
0
2 3
5 7 10
1
2 3
5 7 10
2
4
4
30
35
20
25
10
15
5
40
0
MAXIMUM ON-STATE CHARACTERISTICS
O
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
S
CONDUCTION TIME
(CYCLES AT 60Hz)
4
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