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參數(shù)資料
| 型號： | BCR3PM8 |
| 英文描述： | FUSE BLOCK 3AG 1POS SOLDER |
| 中文描述： | 可控硅| 400V五（DRM）的| 3A條口（T）的有效值| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 420K |
| 代理商： | BCR3PM8 |
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
°
C
160
120
100
60
20
0
4.0
0
0.5
1.5
2.5
3.5
40
80
140
1.0
2.0
3.0
10
0
2 3
10
0
5 710
1
2 3 5 710
2
2 3 5 710
3
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–
1
V
GD
= 0.2V
I
FGT I,
I
RGT III
I
RGT I
V
GT
P
G(AV)
= 0.3W
P
GM
= 3W
I
GM
=
2 3
10
–
1
5 710
0
2 3 5 710
1
2 3 5 710
2
4.0
4.5
5.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2 3
10
2
5 710
3
2 3 5 7
10
1
10
3
7
5
4
3
2
–
60
–
20
20
10
2
7
5
4
3
2
60
100
140
–
40
0
40
80
120
10
1
10
3
7
5
4
3
2
–
60
–
20
20
10
2
7
5
4
3
2
60
100
140
–
40
0
40
80
120
I
FGT I,
I
RGT I
I
RGT III
5.0
4.0
3.0
2.0
1.0
4.5
3.5
2.5
1.5
0.5
0
4.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
G
GATE CURRENT (mA)
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
G
j
°
C
G
j
°
C
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
G
j
°
C
G
j
°
C
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
T
°
C
CONDUCTION TIME
(CYCLES AT 60Hz)
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
O
RMS ON-STATE CURRENT (A)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
C
°
C
RMS ON-STATE CURRENT (A)
GATE CHARACTERISTICS
(
Ι
,
ΙΙ
AND
ΙΙΙ
)
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