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參數(shù)資料
| 型號： | BCR3PM8 |
| 英文描述： | FUSE BLOCK 3AG 1POS SOLDER |
| 中文描述： | 可控硅| 400V五（DRM）的| 3A條口（T）的有效值| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 420K |
| 代理商： | BCR3PM8 |
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
°
C
2 3
10
1
5 710
2
2 3 5 710
3
2 3 5 710
4
120
0
20
40
60
80
100
140
160
10
10
3
7
5
4
3
2
10
0
2 3
5 7 10
1
10
2
7
5
4
3
2
2 3
5 7 10
2
4
4
I
RGT III
I
RGT I
I
FGT I
10
0
7
5
3
2
10
0
2 3
5 7 10
1
10
1
7
5
7
3
2
2 3
5 7 10
2
6
6
6
6V
6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
TYPICAL EXAMPLE
T
j
= 125
°
C
I QUADRANT
III QUADRANT
COMMUTATION CHARACTERISTICS
C
C
μ
s
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
T
j
= 125
°
C
I
T
= 4A
τ
= 500
μ
s
V
D
= 200V
f = 3Hz
III QUADRANT
I QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (
μ
s)
1
G
G
TYPICAL EXAMPLE
SUPPLY
TIME
TIME
TIME
V
D
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
(dv/dt)c
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