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參數(shù)資料
| 型號(hào)： | BCR20AM12R |
| 英文描述： | TRIAC|600V V(DRM)|20A I(T)RMS|TO-220AB |
| 中文描述： | 可控硅| 600V的五（DRM）的|甲口（T）的有效值| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 376K |
| 代理商： | BCR20AM12R |
Mar. 2002
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)
c
(di/dt)
c
V
D
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5
°
C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
T
j
=125
°
C/150
°
C, V
DRM
applied
T
c
=25
°
C, I
TM
=30A, Instantaneous measurement
T
j
=25
°
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
°
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
°
C/150
°
C, V
D
=1/2V
DRM
Junction to case
3
T
j
=125
°
C/150
°
C
Unit
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
2
Gate trigger current
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise off-state commutating voltage
4
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0/3.0
1.5
1.5
1.5
1.5
20
20
20
—
2.0
—
!
@
#
!
@
#
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
mA
V
V
V
V
mA
mA
mA
V
°
C/W
V/
μ
s
Symbol
Parameter
Test conditions
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
PERFORMANCE CURVES
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
T
j
=125
°
C/150
°
C
2. Rate of decay of on-atate commutating current
(di/dt)
c
=
–
10A/ms
3. Peak off-state voltage
V
D
=400V
The product guaranteed maximum junction
temperature 150
°
C (See warning.)
10
0
2
3
5 7
10
1
160
80
2
3
5 7
10
2
120
40
200
240
0
0.5
1.5
2.5
3.5
1.0
2.0
3.0
4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
j
= 150
°
C
T
j
= 25
°
C
MAXIMUM ON-STATE
CHARACTERISTICS
O
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
S
CONDUCTION TIME
(CYCLES AT 60Hz)
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