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參數資料
| 型號： | BCR20AM12R |
| 英文描述： | TRIAC|600V V(DRM)|20A I(T)RMS|TO-220AB |
| 中文描述： | 可控硅| 600V的五（DRM）的|甲口（T）的有效值| TO - 220AB現有 |
| 文件頁數： | 10/12頁 |
| 文件大?。?/td> | 376K |
| 代理商： | BCR20AM12R |
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150
°
C (See warning.)
160
100
80
40
20
0
–
60
140
60
120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
3
5
4
7
3
2
5
4
3
2
7
10
2
10
1
160
140
40
–
40
–
60
–
20 0
20
60 80 100120
160
140
40
–
40
–
60
–
20 0
20
60 80 100120
160
140
40
–
40
–
60
–
20 0
20
60 80 100120
160
140
40
–
40
–
20 0
20
60 80 100120
10
3
7
5
3
2
10
2
10
3
7
5
3
2
10
3
7
5
3
2
5
3
2
160
120
100
60
20
0
4.0
0 0.5
1.5
2.5
3.5
5.0
4.5
40
80
140
1.0
2.0
3.0
160
120
100
60
20
0
25
30
0
15
20
40
80
140
5
10
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
A
°
C
RMS ON-STATE CURRENT (A)
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
NATURAL CONVECTION
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
LOADS
60 60 t 2.3
160 160
t 2.3
100 100
t 2.3
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
A
°
C
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
LOADS
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
R
j
°
C
R
j
°
C
TYPICAL EXAMPLE
JUNCTION TEMPERATURE (
°
C)
1
H
j
°
C
H
(
j
°
C
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
IH(typ) = 20mA
LACHING CURRENT VS.
JUNCTION TEMPERATURE
L
JUNCTION TEMPERATURE (
°
C)
T
2
+
, G
+
T
2
–
, G
–
TYPICAL
EXAMPLE
T
2
+
, G
–
TYPICAL
EXAMPLE
DISTRIBUTION
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
B
j
°
C
B
j
°
C
TYPICAL EXAMPLE
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| BCR20AM8R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|400V V(DRM)|20A I(T)RMS|TO-220AB |
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