參數(shù)資料
型號(hào): BCR20AM12R
英文描述: TRIAC|600V V(DRM)|20A I(T)RMS|TO-220AB
中文描述: 可控硅| 600V的五(DRM)的|甲口(T)的有效值| TO - 220AB現(xiàn)有
文件頁(yè)數(shù): 12/12頁(yè)
文件大?。?/td> 376K
代理商: BCR20AM12R
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150
°
C (See warning.)
6
6
6
6V
6V
6V
330
330
330
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
C
1
C
1
= 0.1~0.47
μ
F
R
1
= 47~100
C
0
= 0.1
μ
F
R
0
= 100
C
0
R
0
R
1
LOAD
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
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