參數(shù)資料
型號: BCR20AM12L
英文描述: TRIAC|600V V(DRM)|20A I(T)RMS|TO-220AB
中文描述: 可控硅| 600V的五(DRM)的|甲口(T)的有效值| TO - 220AB現(xiàn)有
文件頁數(shù): 5/12頁
文件大?。?/td> 376K
代理商: BCR20AM12L
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
°
C
160
100
80
40
20
0
–60
140
40
–40
–20 0
20
60 80
140
100120
60
120
–60 –40–20 0
20 40 60 80 100120140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
10
3
5
4
7
3
2
5
4
3
2
7
–60
–20
20
10
2
60
100
140
–40
0
40
80
120
10
140
40
–40
–60
–20 0
20
60 80 100120
10
3
7
5
3
2
10
4
7
5
3
2
10
5
7
5
3
2
10
160
120
100
60
20
0
4.0
0
0.5
1.5
2.5
3.5
40
80
140
1.0
2.0
3.0
160
120
100
60
20
0
25
30
0
15
20
40
80
140
5
10
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
A
°
C
RMS ON-STATE CURRENT (A)
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
NATURAL CONVECTION
60 60 t 2.3
100 100 t 2.3
160 160 t 2.3
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
A
°
C
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
R
j
°
C
R
j
°
C
TYPICAL EXAMPLE
JUNCTION TEMPERATURE (
°
C)
1
H
j
°
C
H
(
j
°
C
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
IH(typ) = 20mA
LACHING CURRENT VS.
JUNCTION TEMPERATURE
L
JUNCTION TEMPERATURE (
°
C)
T
2
+
, G
+
T
2
, G
TYPICAL
EXAMPLE
T
2
+
, G
TYPICAL
EXAMPLE
DISTRIBUTION
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
B
j
°
C
B
j
°
C
TYPICAL EXAMPLE
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