參數(shù)資料
型號: BCR20AM12L
英文描述: TRIAC|600V V(DRM)|20A I(T)RMS|TO-220AB
中文描述: 可控硅| 600V的五(DRM)的|甲口(T)的有效值| TO - 220AB現(xiàn)有
文件頁數(shù): 11/12頁
文件大?。?/td> 376K
代理商: BCR20AM12L
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150
°
C (See warning.)
10
10
3
7
5
3
2
10
0
2
3
5 7
10
1
10
2
7
5
3
2
2
3
5 7
10
2
10
1
10
2
2
3
10
1
5
7
3
5
7
10
2
7
5
3
2
7
5
7
3
2
10
0
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
120
0
20
40
60
80
100
140
160
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
120
0
20
40
60
80
100
140
160
10
1
10
2
2
3
10
1
5
7
3
5
7
10
2
7
5
3
2
7
5
7
3
2
10
0
I
FGT I
I
RGT I
I
RGT III
TYPICAL EXAMPLE
T
j
= 125
°
C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T
j
= 125
°
C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
TYPICAL EXAMPLE
T
j
= 150
°
C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T
j
= 150
°
C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
I QUADRANT
III QUADRANT
TYPICAL
EXAMPLE
T
j
= 125
°
C
I
T
= 4A
τ
= 500
μ
s
V
D
= 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
C
C
μ
s
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
SUPPLY
TIME
TIME
TIME
V
D
MAIN CURRENT
MAIN
(di/dt)c
(dv/dt)c
COMMUTATION CHARACTERISTICS
(T
j
= 125
°
C)
I QUADRANT
III QUADRANT
TYPICAL
EXAMPLE
T
j
= 150
°
C
I
T
= 4A
τ
= 500
μ
s
V
D
= 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
C
C
μ
s
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
SUPPLY
TIME
TIME
TIME
V
D
MAIN CURRENT
MAIN
(di/dt)c
(dv/dt)c
COMMUTATION CHARACTERISTICS
(T
j
= 150
°
C)
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER PULSE WIDTH (
μ
s)
1
G
G
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