參數(shù)資料
型號： BC847PN-7
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-6
文件頁數(shù)： 1/3頁
文件大?。?/td> 46K
代理商： BC847PN-7
Maximum Ratings PNP BC857B Section
@ T
A
= 25°C unless otherwise specified
DS30278 Rev. 2 - 2
1 of 3
BC847PN
BC847PN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
Features
Maximum Ratings NPN BC847B Section
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
Value
50
Unit
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
45
6.0
100
200
200
mA
mA
mA
Epitaxial Die Construction
Two internal isolated NPN/PNP Transistors in
one package
Ultra-Small Surface Mount Package
Mechanical Data
A
M
J
L
D
B C
H
K
G
F
C
1
B
2
E
2
E
1
B
1
C
2
Notes:
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 3): K7P
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approx.)
Characteristic
Symbol
P
d
R
JA
T
j
, T
STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Maximum Ratings Total Device
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
Value
-50
-45
-5.0
Unit
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
-100
-200
-200
mA
mA
mA
SOT-363
Min
Dim
A
B
C
D
F
H
J
K
L
M
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.80
2.20
0.10
0.90
1.00
0.25
0.40
0.10
0.25
°8
All Dimensions in mm
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BC847PN-7-F 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC847PNB6327XT 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R 制造商:Infineon Technologies AG 功能描述:TRANSISTOR NPN AF 45V SOT-363
BC847PNE6327 制造商:Rochester Electronics LLC 功能描述:- Bulk
BC847PN-E6327 制造商:Infineon Technologies AG 功能描述:Bipolar Junction Transistor, Pair, Complementary, SOT-363
BC847PNE6327BTSA1 制造商:Infineon Technologies AG 功能描述:TRANSISTOR NPN/PNP AF 45V SOT363
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