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參數(shù)資料
| 型號： | BC847 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors (NPN)(小信號晶體管（NPN）) |
| 中文描述： | 小信號晶體管（NPN）的（小信號晶體管（NPN）的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 301K |
| 代理商： | BC847 |
Dimensions in inches and (millimeters)
SOT-23
.122 (3.1)
.016 (0.4)
)
.037(0.95) .037(0.95)
m
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.094 (2.4)
.
.
)
.
.
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking code
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
FEATURES
Small Signal Transistors (NPN)
5/98
Symbol
Value
Unit
Collector-Base Voltage
BC846
BC847
BC848, BC849
V
CBO
V
CBO
V
CBO
80
50
30
V
V
V
Collector-Emitter Voltage
BC846
BC847
BC848, BC849
V
CES
V
CES
V
CES
80
50
30
V
V
V
Collector-Emitter Voltage
BC846
BC847
BC848, BC849
V
CEO
V
CEO
V
CEO
65
45
30
V
V
V
Emitter-Base Voltage
BC846, BC847
BC848, BC849
V
EBO
V
EBO
6
5
V
V
Collector Current
I
C
100
mA
Peak Collector Current
I
CM
200
mA
Peak Base Current
I
BM
200
mA
Peak Emitter Current
–I
EM
200
mA
Power Dissipation at T
SB
= 50 °C
P
tot
310
1)
mW
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
S
–65 to +150
°C
1)
Device on fiberglass substrate, see layout
BC846 THRU BC849
NPN Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
Especially suited for automatic insertion in
thick- and thin-film circuits.
These transistors are subdivided into three
groups A, B and C according to their current gain. The
type BC846 is available in groups A and B, however, the
types BC847 and BC848 can be supplied in all three
groups. The BC849 is a low noise type available in groups
B and C. As complementary types, the PNP transistors
BC856...BC859 are recommended.
Type
Marking
BC846A
B
BC847A
B
C
1A
1B
1E
1F
1G
Type
Marking
BC848A
B
C
BC849B
C
1J
1K
1L
2B
2C
相關PDF資料 |
PDF描述 |
|---|---|
| BC848 | Small Signal Transistors (NPN)(小信號晶體管（NPN）) |
| BC849 | Small Signal Transistors (NPN)(小信號晶體管（NPN）) |
| BC848UF | CAP .15UF 100V CERAMIC MONO 10% |
| BC856AT | PNP general purpose transistors |
| BC856BT | PNP general purpose transistors |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC847 /T3 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC847 T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC847,215 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC847,235 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC847 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-23 |
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