參數(shù)資料
型號(hào): BC350
英文描述: 64Mb EDO/FPM - OBSOLETE
中文描述: 通用晶體管
文件頁數(shù): 1/3頁
文件大小: 243K
代理商: BC350
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC350
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM
: 0.3 W
Collector current
I
CM
: -0.1 A
Collector-base voltage
V
(BR)CBO
: -50 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= -100
A
I
E
=0
-50
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -1mA, IB=0
-45
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= -100
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-50V, I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
=-35V, I
B
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= -3V, I
C
=0
-0.1
A
DC current gain
h
FE
V
CE
=-5 V, I
C
= -2mA
40
450
Collector-emitter saturation voltage
V
CEsat
I
C
= -10mA, I
B
= -1mA
-0.3
V
Base-emitter saturation voltage
V
BEsat
I
C
= -10mA, I
B
= -1mA
-1
V
Transition frequency
f
T
V
CE
=-5V,I
C
=-10mA,
f=30MHz
125
MHz
TO
1
2
3
92
1.EMITTER
2. BASE
3. COLLECTOR
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