參數(shù)資料
型號: BC212L
英文描述: COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR
中文描述: 互補硅外延平面晶體管
文件頁數(shù): 3/4頁
文件大小: 107K
代理商: BC212L
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.0
1.5
1.0
0.2
0.3
0.5
0.7
–200
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
IC, COLLECTOR CURRENT (mAdc)
h
VCE = –10 V
TA = 25
°
C
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
–0.1
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V
TA = 25
°
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
VCE(sat) @ IC/IB = 10
400
300
20
30
40
60
80
100
200
IC, COLLECTOR CURRENT (mAdc)
Figure 3. Current–Gain — Bandwidth Product
f
C
10
1.0
2.0
3.0
5.0
7.0
–0.4
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
TA = 25
°
C
Cib
Cob
r
150
140
130
120
110
100
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
VCE = –10 V
TA = 25
°
C
–0.5
–1.0
–2.0 –3.0
–5.0
–10
–20
–30
–50
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20
–30 –40
1.0
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
VCE = –10 V
f = 1.0 kHz
TA = 25
°
C
–0.1
–0.2 –0.3
–0.5
–1.0
–2.0 –3.0
–5.0
–10
VCE = –10 V
f = 1.0 kHz
TA = 25
°
C
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
0.01
0.03
0.05
0.1
0.3
0.5
o
150
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