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參數(shù)資料
| 型號： | BC2123 |
| 英文描述： | Cyclone FPGA 12K FBGA-256 |
| 中文描述： | 進(jìn)步黨硅晶體管放大器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 107K |
| 代理商： | BC2123 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC
212
BC
213
BC
214
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
–50
–30
–30
Vdc
Collector–Base Voltage
–60
–45
–45
Vdc
Emitter–Base Voltage
–5.0
Vdc
Collector Current — Continuous
–100
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
350
2.8
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.0
8.0
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
357
°
C/W
Thermal Resistance, Junction to Case
125
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC212
BC213
BC214
V(BR)CEO
–50
–30
–30
—
—
—
—
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10 A, IE = 0)
BC212
BC213
BC214
V(BR)CBO
–60
–45
–45
—
—
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
BC212
BC213
BC214
V(BR)EBO
–5
–5
–5
—
—
—
—
—
—
Vdc
Collector–Emitter Leakage Current
(VCB = –30 V)
BC212
BC213
BC214
ICBO
—
—
—
—
—
—
–15
–15
–15
nAdc
Emitter–Base Leakage Current
(VEB = –4.0 V, IC = 0)
BC212
BC213
BC214
IEBO
—
—
—
—
—
—
–15
–15
–15
nAdc
Order this document
by BC212/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BC212 | COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR |
| BC212L | COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR |
| BC212A | Cyclone FPGA 12K FBGA-256 |
| BC212BRL1 | Cyclone FPGA 12K FBGA-324 |
| BC212CSM | Cyclone FPGA 20K FBGA-400 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC212A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| BC212B | 功能描述:兩極晶體管 - BJT PNP -50V -100mA HFE/400 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC212B WAF | 制造商:ON Semiconductor 功能描述: |
| BC212B | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP TO-92 |
| BC212B_D26Z | 功能描述:兩極晶體管 - BJT PNP -50V -100mA HFE/400 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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