參數(shù)資料
型號(hào)： BB303C
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 7V V(BR)DSS | 25MA I(D) | SC-82AB
中文描述： 晶體管| MOSFET的| N溝道| 7伏五（巴西）直| 25mA電流（?。﹟律師- 82AB
文件頁(yè)數(shù)： 2/14頁(yè)
文件大?。?/td> 74K
代理商： BB303C
BB303C
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
V
G1S
V
G2S
I
D
Pch
7
V
Gate1 to source voltage
– 0/ +7
V
Gate2 to source voltage
– 0/ +7
V
Drain current
25
mA
Channel power dissipation
100
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
7
—
—
V
I
D
= 200
μ
A
V
G1S
= V
G2S
= 0
I
G1
= +10
μ
A
V
G2S
= V
DS
= 0
I
G2
= +10
μ
A
V
G1S
= V
DS
= 0
V
G1S
= +5V
V
G2S
= V
DS
= 0
V
G2S
= +5V
V
G1S
= V
DS
= 0
V
DS
= 5V, V
G2S
= 4V
I
D
= 100
μ
A
V
DS
= 5V, V
G1S
= 5V
I
D
= 100
μ
A
V
DS
= 5V, V
G1
= 5V
V
G2S
= 4V, R
G
= 470k
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V
R
G
= 470k
, f = 1kHz
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 470k
f = 1MHz
Gate1 to source breakdown
voltage
V
(BR)G1SS
+7
—
—
V
Gate2 to source breakdown
voltage
V
(BR)G2SS
+7
—
—
V
Gate1 to source cutoff current I
G1SS
—
—
+100
nA
Gate2 to source cutoff current I
G2SS
—
—
+100
nA
Gate1 to source cutoff voltage V
G1S(off)
0.3
0.6
0.9
V
Gate2 to source cutoff voltage V
G2S(off)
0.5
0.8
1.1
V
Drain current
I
D(op)
9
14
20
mA
Forward transfer admittance
|y
fs
|
35
42
50
mS
Input capacitance
c
iss
c
oss
2.6
3.3
4.0
pF
Output capacitance
1.7
2.1
2.5
pF
Reverse transfer capacitance c
rss
Power gain
—
0.025
0.05
pF
PG1
28
32
—
dB
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 470k
f = 200MHz
Noise figure
NF1
—
1.0
1.6
dB
Power gain
PG2
12
16.5
—
dB
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 470k
f = 900MHz
Noise figure
NF2
—
2.85
3.7
dB
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