參數(shù)資料
型號: BB151
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Low-voltage variable capacitance diode(低壓可變電容二極管)
中文描述: 19.1 pF, SILICON, VARIABLE CAPACITANCE DIODE
封裝: PLASTIC, SC-76, 2 PIN
文件頁數(shù): 2/8頁
文件大小: 53K
代理商: BB151
1999 May 12
2
Philips Semiconductors
Preliminary specification
Low-voltage variable capacitance diode
BB151
FEATURES
Very low capacitance spread
Excellent linearity
Very small plastic SMD package
C3: 10.6 pF; ratio: 1.53
Very low series resistance.
APPLICATIONS
Voltage controlled oscillators (VCO).
DESCRIPTION
The BB151 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD323 very
small plastic SMD package.
PINNING
PIN
DESCRIPTION
1
2
cathode
anode
Fig.1 Simplified outline (SOD323) and symbol.
Marking code:
PA.
Cathode side indicated by a bar.
4 columns
k
1
a
2
MAM130
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
55
55
10
V
continuous forward current
storage temperature
20
mA
°
C
°
C
+150
operating junction temperature
+150
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
0.4
MAX.
UNIT
I
R
reverse current
V
R
= 10 V; see Fig.3
V
R
= 10 V; T
j
= 85
°
C; see Fig.3
10
nA
200
0.55
nA
r
s
C
d
diode series resistance f = 470 MHz; V
R
is the value at which C
d
= 9 pF
diode capacitance
f = 1 MHz; see Figs 2 and 4
V
R
= 0.5 V
V
R
= 1 V
V
R
= 2 V
V
R
= 3 V
V
R
= 4 V
capacitance ratio
f = 1 MHz
15.4
9.9
1.45
19.1
16.2
12.8
10.6
9
1.53
17
11.3
pF
pF
pF
pF
pF
capacitance ratio
f = 1 MHz
1.8
C
d 3V
)
)
C
C
C
d 4V
)
)
-----------------
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