參數(shù)資料
型號: BAW27-TAP
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: BAW27 Small Signal Fast Switching Diode
中文描述: Diodes (General Purpose, Power, Switching) 75 Volt 200mA 4.0 Amp IFSM
文件頁數(shù): 1/3頁
文件大小: 66K
代理商: BAW27-TAP
BAW27
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 06-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85548
Small Signal Switching Diode
MECHANICAL DATA
Case:
DO-35
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
Silicon epitaxial planar diode
Low forward voltage drop
High forward current capability
AEC-Q101 qualified
Material categorization:
For definitions of compliance please see
www.vishay.com/doc99912
APPLICATIONS
High speed switch and general purpose use in computer
and industrial applications
PARTS TABLE
PART
BAW27
ORDERING CODE
BAW27-TR or BAW27-TAP
TYPE MARKING
BAW27
INTERNAL CONSTRUCTION
Single diode
REMARKS
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Forward continuous current
Average forward current
TEST CONDITION
SYMBOL
V
RRM
V
R
I
FSM
I
F
I
F(AV)
P
tot
P
tot
VALUE
75
60
4
600
300
440
500
UNIT
V
V
A
mA
mA
mW
mW
t
p
= 1 μs
V
R
= 0
Power dissipation
l = 4 mm, T
L
= 45 °C
l = 4 mm, T
L
25 °C
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
l = 4 mm, T
L
= constant
SYMBOL
R
thJA
T
j
T
stg
VALUE
350
175
- 65 to + 175
UNIT
K/W
°C
°C
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