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參數(shù)資料
| 型號： | BAS12 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Controlled avalanche rectifiers |
| 中文描述： | 0.3 A, 400 V, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 42K |
| 代理商： | BAS12 |
1996 Sep 26
5
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
Fig.6
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
200
0
50
100
10
1
MGD297
10
IR
(
μ
A)
1
150
Tj (
o
C)
V
R
= V
RRMmax
.
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
°
C.
handbook, halfpage
MGD296 - 1
10
VR(V)
1
10
1
10
2
10
3
Cd
(pF)
1
Fig.8 Device mounted on a printed-circuit board.
handbook, halfpage
MGA200
3
2
7
50
25
50
Dimensions in mm.
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| BAS121 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE |
| BAS121 _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BAS121_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BAS121A | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE |
| BAS121A _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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