參數(shù)資料
型號(hào): BAS12
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Controlled avalanche rectifiers
中文描述: 0.3 A, 400 V, SILICON, SIGNAL DIODE
文件頁(yè)數(shù): 3/7頁(yè)
文件大小: 42K
代理商: BAS12
1996 Sep 26
3
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
μ
m, see Fig.8.
For more information please refer to the “General Part of associated Handbook”
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 300 mA; T
j
= T
jmax
; see Fig.5
I
F
= 300 mA; see Fig.5
I
R
= 0.1 mA
1.0
1.1
V
V
V
(BR)R
reverse avalanche
breakdown voltage
BAS11
BAS12
reverse current
330
440
V
V
nA
μ
A
μ
s
I
R
V
R
= V
RRMmax
; see Fig.6
V
R
= V
RRMmax
; T
j
= 125
°
C; see Fig.6
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.9
V
R
= 0 V; f = 1 MHz; see Fig.7
250
10
t
rr
reverse recovery time
1
C
d
diode capacitance
20
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
180
340
K/W
K/W
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