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參數(shù)資料
| 型號(hào)： | BAS12 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Controlled avalanche rectifiers |
| 中文描述： | 0.3 A, 400 V, SILICON, SIGNAL DIODE |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | BAS12 |
1996 Sep 26
4
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
handbook, halfpage
0
IF(AV)
(A)
0.4
0.2
0
40
200
MGD293
80
120
160
Ttp (
o
C)
Lead length 10 mm.
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.3
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
handbook, halfpage
IF(AV)
(A)
0
40
200
0.3
0.1
0
0.2
80
120
160
Tamb (
°
C)
MGD295
Device mounted as shown in Fig.8.
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
handbook, halfpage
P
(W)
0
0.1
0.2
0.4
2.5
1.57
0
0.4
MGD292
0.3
IF(AV)(A)
0.3
0.2
0.1
1.42
a = 3
2
Solid line: T
j
= 25
°
C.
Dotted line: T
j
= 150
°
C.
Fig.5
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
(A)
0
1
2
VF (V)
3
0
4
MGD294
3
2
1
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| BAS121 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH VOLTAGE, LOW LEAKAGE SWITCHING DIODE |
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| BAS121A _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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