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參數(shù)資料
| 型號(hào)： | BA545AL |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Low-leakage diode |
| 中文描述： | 低泄漏二極管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 54K |
| 代理商： | BA545AL |
1999 May 28
3
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
see Fig.5
V
R
= 125 V; E
max
= 100 lx
V
R
= 30 V; T
j
= 125
°
C; E
max
= 100 lx
V
R
= 125 V; T
j
= 125
°
C; E
max
= 100 lx
V
R
= 125 V; T
j
= 150
°
C; E
max
= 100 lx
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.7
780
860
1000
mV
mV
mV
I
R
reverse current
1.5
1
300
500
2
4
nA
nA
nA
μ
A
pF
μ
s
C
d
t
rr
diode capacitance
reverse recovery time
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
300
375
K/W
K/W
note 1
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