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參數(shù)資料
| 型號： | BA545AL |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Low-leakage diode |
| 中文描述： | 低泄漏二極管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 54K |
| 代理商： | BA545AL |
1999 May 28
2
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
FEATURES
Continuous reverse voltage:
max. 125 V
Repetitive peak forward current:
max. 625 mA
Low reverse current: max. 1 nA
Switching time: typ. 1.5
μ
s.
APPLICATION
Low leakage current applications.
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a small
SOD80C glass SMD package.
Fig.1 Simplified outline (SOD80C) and symbol.
handbook, 4 columns
MAM061
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current square wave; T
j
= 25
°
C prior to
125
125
250
625
V
V
mA
mA
note 1; see Fig.2
surge; see Fig.4
t
p
= 1
μ
s
t
p
= 1 ms
t
p
= 1 s
T
amb
= 25
°
C; note 1
65
4
1
0.5
400
+175
175
A
A
A
mW
°
C
°
C
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
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