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參數(shù)資料
| 型號： | AWT6172RM33P9 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 6 X 6 MM, 1.10 MM HEIGHT, ROHS COMPLIANT PACKAGE-20 |
| 文件頁數(shù)： | 15/20頁 |
| 文件大小： | 801K |
| 代理商： | AWT6172RM33P9 |
4
aWt6172
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these
conditions. exposure to absolute ratings for extended periods
of time may adversely affect reliability.
eLeCtrICaL CHaraCterIstICs
table 2: absolute Maximum ratings
although protection circuitry has been designed into this device, proper precautions
should be taken to avoid exposure to electrostatic discharge (esD) during handling and
mounting. Human body model HBM employed is resistance = 1500, capacitance = 100pF.
table 3: esD ratings
table 4: Digital Inputs
ParaMeter
MIN
MaX
uNIts
Supply Voltage (VBATT)
-0.5
+6
V
RF Input Power (RFIN)
-
12
dBm
Control Voltage (VRAMP)
-0.3
3.0
V
Storage Temperature (TSTG)
-55
150
°C
ParaMeter
sYMBOL
MIN tYP MaX uNIts
Logic High Voltage
VIH
1.2
-
3.0
V
Logic Low Voltage
VIL
-0.5
-
0.5
V
Logic High Current
|IIH|
-
30
A
Logic Low Current
|IIL|
-
30
A
ParaMeter
MetHOD
ratING
uNIt
ESD Threshold voltage (RF ports)
HBM
2.5
kV
ESD Threshold voltage (control inputs)
HBM
2.5
kV
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