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參數(shù)資料
| 型號： | AWT6172RM33P9 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 6 X 6 MM, 1.10 MM HEIGHT, ROHS COMPLIANT PACKAGE-20 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 801K |
| 代理商： | AWT6172RM33P9 |
02/2009
Figure 1: Block Diagram
Features
InGaP HBT Technology
Low profile 1.1 mm
Small Package Outline 6 mm x 6 mm
EGPRS Capable (class 12)
Integrated Reference Voltage
GMsK MODe
Integrated power control (CMOS)
+35 dBm GSM850/900 Output Power
+33 dBm DCS/PCS Output Power
55 % GSM850/900 PAE
52 % DCS/PCS PAE
Power control range > 50 dB
eDGe MODe
+28.5 dBm GSM850/900 Output Power
+27.5 dBm DCS/PCS Output Power
-66 dBc Typical ACPR (400 kHz)
-78 dBc Typical ACPR (600 kHz)
aPPLICatIONs
Dual/Tri/Quad Band Handsets, PDAs and Data
Devices
PrODuCt DesCrIPtION
This quad band power amplifier module supports dual,
tri and quad band applications for both GMSK and
8-PSK modulation schemes. There are two amplifier
chains, one to support GSM850/900 bands, the other
for DCS/PCS bands.
The module includes an integrated power control
scheme for use in the GMSK mode. This facilitates
fast and easy production calibration and reduces the
number of external components required to complete
a power control function. The amplifier’s power control
range is typically 55 dB, with the output power set by
applying an analog voltage to VRAMP.
In EDGE mode, the VRAMP pin is disabled and no spe-
cific voltage is required for proper operation. Output
power is controlled by varying the input power.
All of the RF ports for this device are internally matched
to 50.
aWt6172
GSM/GPRS/EDGE Power Amplifier
Module with Integrated Power Control
PreLIMINarY Data sHeet - rev 1.4
DCS/PCS_IN
GSM850/900_IN
DCS/PCS_OUT
GSM850/900_OUT
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