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參數(shù)資料
| 型號： | AWT6172RM33P8 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 6 X 6 MM, 1.10 MM HEIGHT, ROHS COMPLIANT PACKAGE-20 |
| 文件頁數(shù)： | 20/20頁 |
| 文件大?。?/td> | 801K |
| 代理商： | AWT6172RM33P8 |
9
aWt6172
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
table 9: electrical Characteristics for GsM850 eDGe Mode
Unless otherwise specified: VBATT = 3.6 v, Pulse Width =1154s, Duty Cycle 25%
ZIN = ZOUT = 50, tC = 25 °C, Bs = LOW, tX_eN = HIGH, vMODe = HIGH
Notes:
(1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
(2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
ParaMeter
MIN
tYP
MaX uNIt
COMMeNts
Operating Frequency ( Fo )
824
-
849
MHz
Linear POUT (High Power Mode)
Linear POUT (Low Power Mode)
28.5
20
-
dBm V
BIAS
= High
VBIAS = Low
Linear Degraded Output Power
LD_POUT (High Power Mode) (1)
LD_POUT (Low Power Mode) (2)
26
17.5
-
dBm
Meets ACPR and EVM limits specified
under nominal conditions
Linear Gain (High Power Mode) 29.0
31.5
34.0
dB
VBIAS = High
Linear Gain (Low Power Mode)
24.0
28.5
34.0
dB
VBIAS = Low
Gain Variation
-
-0.015
-
dB/oC -20 oC TC +85 oC
Power-Added Efficiency
-
22
-
%
POUT = 28.5 dBm
Icq (Low Power Mode)
-
100
-
mA
VBIAS = Low
Error Vector Magnitude (EVM)
-
2
5
%
Linearity
ACPR1
ACPR2
ACPR3
-
-38
-66
-79
-33
-58
-64
dBc
POUT < 28.5 dBm, BW = 30 kHz
Fo 200 kHz
Fo 400 kHz
Fo 600 kHz
Cross Isolation
Fo @ DCS/PCS port
2Fo, 3Fo @ DCS/PCS port
-
-7
-50
0
-20
dBm POUT < 28.5 dBm
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-40
-35
-20
-15
-10
dBm POUT < 28.5 dBm
Stability (all spurious)
Output Load VSWR = 6:1 All Phases, POUT < 28.5 dBm
-
-36
dBm FOUT < 1 GHz, RBW = 3 MHz
-
-30
dBm FOUT > 1 GHz, RBW = 3 MHz
Ruggedness
No Degradation, No Damage
Load VSWR = 10:1, All Phase Angles;
POUT 28.5 dBm
RX Noise Power
-
-83
-80
dBm F
TX
= 849 MHz, RBW = 100 kHz
FRX = 869 to 894MHz, POUT < 28.5 dBm
Input Return Loss
-
2.5:1 VSWR
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