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參數(shù)資料
| 型號： | AWT6171RM15P8 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 6 X 6 MM, 1.30 MM HEIGHT, ROHS COMPLIANT PACKAGE-18 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 275K |
| 代理商： | AWT6171RM15P8 |
08/2005
PRODUCT DESCRIPTION
As with previous generations, the AWT6171R
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6171R input and output terminals are
internal matched to 50 ohms and DC blocked at the
AWT6171R
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
PRELIMINARY DATA SHEET - Rev 1.0
M15 Package
18 Pin 6 mm x 6 mm x 1.3 mm
Amplifier Module
FEATURES
Integrated Vreg (regulated supply)
Harmonic Performance
≤ -20 dBm
High Efficiency (PAE) at Pmax:
-GSM850, 54 %
-GSM900, 55 %
-DCS, 52 %
-PCS, 52 %
+34.5 dBm GSM850/900 Output Power at 3.5 V
+31.5 dBm DCS/PCS Output Power at 3.5 V
55 dB Dynamic Range
GPRS Class 12 Capable
RoHS Compliant Package, 250°C MSL-3
APPLICATIONS
Dual/Tri/Quad Band Handsets & PDAs
CMOS BIAS/Integrated Power Control
V
CC2
H(s)
V
CC2
DCS/PCS
IN
GSM850/900
IN
GSM850/900
OUT
DCS/PCS
OUT
V
CC_OUT
B
S
TX
EN
V
BATT
C
EXT
V
RAMP
MATCH
RF outputs, reducing the number of external
components required in the final application. Both
PA die, GSM850/900 and DCS/PCS, are fabricated
using state of the art InGaP HBT technology, known
for it is proven reliability and temperature stability.
Figure 1: Block Diagram
AWT6171R
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相關(guān)代理商/技術(shù)參數(shù) |
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| AWT6171RM15P9 | 制造商:Rochester Electronics LLC 功能描述: 制造商:ANADIGICS Inc 功能描述: |
| AWT6172 | 制造商:ANADIGICS 制造商全稱:ANADIGICS, Inc 功能描述:GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control |
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| AWT6172R | 制造商:ANADIGICS Inc 功能描述:RF & MW POWER AMPLIFIER |
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