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參數(shù)資料
| 型號： | AUIRL7736M2TR1 |
| 元件分類： | JFETs |
| 英文描述： | 22 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 230K |
| 代理商： | AUIRL7736M2TR1 |
www.irf.com
1
04/07/11
HEXFET is a registered trademark of International Rectifier.
Description
The AUIRL7736M2 combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET
packaging platform coupled with the latest silicon technology allows the AUIRL7736M2 to offer substantial system level savings and performance
improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The
AUIRL7736M2 can be utilized together with the AUIRL7732S2 as a sync/control MOSFET pair in a buck converter topology. This MOSFET
utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are
175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly
efficient, robust and reliable device for high current automotive applications.
AUIRL7736M2TR
AUIRL7736M2TR1
Applicable DirectFET Outline and Substrate Outline
DirectFET Power MOSFET
AUTOMOTIVE GRADE
DirectFET ISOMETRIC
M4
Logic Level
Advanced Process Technology
Optimized for Automotive DC-DC, Motor Drive and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead free, RoHS and Halogen free
SB
SC
M2
M4
L4
L6
L8
PD - 97656
DD
G
S
V(BR)DSS
40V
RDS(on) typ.
2.2m
Ω
max.
3.0m
Ω
ID (Silicon Limited)
112A
Qg
52nC
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
IDM
Pulsed Drain Current
i
PD @TC = 25°C
Power Dissipation
f
PD @TA = 25°C
Power Dissipation
e
EAS
Single Pulse Avalanche Energy (Thermally Limited)
h
EAS (tested)
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
g
A
EAR
Repetitive Avalanche Energy
g
mJ
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
e
–––
60
RθJA
Junction-to-Ambient
j
12.5
–––
RθJA
Junction-to-Ambient
k
20
–––
°C/W
RθJCan
Junction-to-Can
fl
–––
2.4
RθJ-PCB
Junction-to-PCB Mounted
1.0
–––
Linear Derating Factor
f
W/°C
V
A
± 16
40
0.42
22
63
W
2.5
See Fig. 18a,18b,16,17
260
°C
-55 to + 175
Max.
112
79
450
179
119
68
mJ
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