參數(shù)資料
型號(hào)： AUIRLR024NTR
元件分類(lèi)： JFETs
英文描述： 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 312K
代理商： AUIRLR024NTR
HEXFET Power MOSFET
01/18/11
www.irf.com
1
AUIRLR024N
AUIRLU024N
AUTOMOTIVE GRADE
l
Advanced Planar Technology
l
Low On-Resistance
l
Logic-Level Gate Drive
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
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Fully Avalanche Rated
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Repetitive Avalanche Allowed up to Tjmax
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Lead-Free, RoHS Compliant
l
Automotive Qualified *
Specifically designed for Automotive applications, this
Cellular design of HEXFET Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of
other applications.
Description
Features
D-Pak
AUIRLR024N
GD
S
Gate
Drain
Source
I-Pak
AUIRLU024N
S
D
G
D
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
V(BR)DSS
55V
RDS(on) max.
0.065
ID
17A
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
3.3
RθJA
Junction-to-Ambient (PCB mount) **
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
-55 to + 175
300 (1.6mm from case )
45
0.3
± 16
5.0
4.5
68
11
Max.
17
12
72
S
D
G
PD- 96348
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRLR024NTRL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRLR024NTRR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRLR024Z 功能描述:MOSFET Automotive FET 55V 7A 58mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRLR024ZTR 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 55V 7A 58MOHM - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 55V 16A DPAK 制造商:International Rectifier 功能描述:Automotive FET 55V 7A 58mOhm
AUIRLR024ZTRL 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 55V 7A 58MOHM - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 55V 16A DPAK 制造商:International Rectifier 功能描述:Automotive FET 55V 7A 58mOhm
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