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參數資料
| 型號： | AUIRFR4620TR |
| 元件分類： | JFETs |
| 英文描述： | 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁數： | 8/12頁 |
| 文件大?。?/td> | 235K |
| 代理商： | AUIRFR4620TR |
AUIRFR4620
www.irf.com
5
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
190
200
210
220
230
240
250
260
V
(B
R
)D
S
,D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(V
)
Id = 5mA
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
DC
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
450
500
E
A
S
,S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
2.05A
2.94A
BOTTOM 15A
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
1.0
10
100
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
E
ne
rg
y
(μ
J)
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
5
10
15
20
25
30
I D
,
D
ra
in
C
ur
re
nt
(A
)
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| AUIRFR48ZTRL | 42 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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| AUIRFR48Z | 42 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR48ZTRR | 42 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRFR4620TRL | 功能描述:MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR4620TRPBF | 制造商:International Rectifier 功能描述: |
| AUIRFR4620TRR | 功能描述:MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR48Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR48ZTR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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