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參數(shù)資料
| 型號： | AUIRFR4620TR |
| 元件分類： | JFETs |
| 英文描述： | 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 235K |
| 代理商： | AUIRFR4620TR |
AUIRFR4620
4
www.irf.com
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM
5.0V
≤60μs PULSE WIDTH
Tj = 25°C
5.0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM
5.0V
≤60μs PULSE WIDTH
Tj = 175°C
5.0V
2
4
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VDS = 50V
≤60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
R
D
S
(o
n)
,D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(N
or
m
al
iz
ed
)
ID = 15A
VGS = 10V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
5
10
15
20
25
30
35
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= 160V
VDS= 100V
VDS= 40V
ID= 15A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRFR4620TRL | 功能描述:MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR4620TRPBF | 制造商:International Rectifier 功能描述: |
| AUIRFR4620TRR | 功能描述:MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR48Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR48ZTR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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