參數(shù)資料
型號： AUIRFR4620TR
元件分類： JFETs
英文描述： 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁數(shù)： 5/12頁
文件大?。?/td> 235K
代理商： AUIRFR4620TR
AUIRFR4620
2
www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 15A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 15A, di/dt ≤ 634A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
Static Electrical @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.23
––– V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
64
78
mΩ
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
gfs
Forward Transconductance
37
–––
S
RG(int)
Internal Gate Resistance
–––
2.6
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
25
38
Qgs
Gate-to-Source Charge
–––
8.2
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
7.9
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
17
–––
td(on)
Turn-On Delay Time
–––
13.4
–––
tr
Rise Time
–––
22.4
–––
td(off)
Turn-Off Delay Time
–––
25.4
–––
tf
Fall Time
–––
14.8
–––
Ciss
Input Capacitance
–––
1710
–––
Coss
Output Capacitance
–––
125
–––
Crss
Reverse Transfer Capacitance
–––
30
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)h–––
113
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)g
–––
317
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
78
–––
TJ = 25°C
VR = 100V,
–––
99
–––
TJ = 125°C
IF = 15A
Qrr
Reverse Recovery Charge
–––
294
–––
TJ = 25°C
di/dt = 100A/μs
f
–––
432
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
7.6
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 50V, ID = 15A
ns
nC
24
100
μA
nA
nC
ns
pF
A
–––
ID = 15A
RG = 7.3Ω
VGS = 10V f
VDD = 130V
ID = 15A, VDS =0V, VGS = 10V
TJ = 25°C, IS = 15A, VGS = 0V f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 15A f
VDS = VGS, ID = 100μA
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS = 100V
Conditions
VGS = 10V f
VGS = 0V
VDS = 50V
= 1.0MHz (See Fig.5)
VGS = 0V, VDS = 0V to 160V h(See Fig.11)
VGS = 0V, VDS = 0V to 160V g
Conditions
ID = 15A
VGS = 20V
VGS = -20V
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRFR4620TRL 功能描述:MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR4620TRPBF 制造商:International Rectifier 功能描述:
AUIRFR4620TRR 功能描述:MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR48Z 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR48ZTR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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