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參數(shù)資料
| 型號： | AUIRF540ZSTRR |
| 元件分類： | JFETs |
| 英文描述： | 36 A, 100 V, 0.0265 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 326K |
| 代理商： | AUIRF540ZSTRR |
AUIRF540Z/S
2
www.irf.com
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.093
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
21
26.5
m
VGS(th)
Gate Threshold Voltage2.0
–––
4.0
V
gfs
Forward Transconductance
36
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
42
63
Qgs
–––
9.7
–––
Qgd
Gate-to-Drain ("Miller") Charge–––
15
–––
td(on)
Turn-On Delay Time
–––15–––
tr
Rise Time
–––51–––
td(off)
Turn-Off Delay Time
–––43–––
tf
Fall Time
–––39–––
LD
Internal Drain Inductance
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
from package
and center of die contact
Ciss
Input Capacitance
–––
1770
–––
Coss
Output Capacitance
–––
180
–––
Crss
Reverse Transfer Capacitance
–––
100
–––
Coss
Output Capacitance
–––
730
–––
Coss
Output Capacitance
–––
110
–––
Coss eff.
Effective Output Capacitance
–––
170
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
3350ns
Qrr
Reverse Recovery Charge
–––
41
62
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 80V, = 1.0MHz
VGS = 0V, VDS = 0V to 80V
f
VGS = 10V e
VDD = 50V
ID = 22A
RG = 12
TJ = 25°C, IS = 22A, VGS = 0V e
TJ = 25°C, IF = 22A, VDD = 50V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 22A e
VDS = VGS, ID = 250A
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 22A
ID = 22A
VDS = 80V
Conditions
VGS = 10V e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
–––
4.5
7.5
nC
ns
nH
pF
A
36
140
–––
Notes through are on page 12
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