參數(shù)資料
型號(hào)： AUIRF3504
元件分類： JFETs
英文描述： 87 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù)： 4/11頁
文件大?。?/td> 218K
代理商： AUIRF3504
AUIRF3504
2
www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.15mH
RG = 50Ω, IAS = 52A. (See Figure 12).
ISD ≤ 52A, di/dt ≤ 6750A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
S
D
G
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.15mH, RG = 50Ω, IAS = 52A.
Rθ is measured at TJ of approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.04
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
7.8
9.2
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
46
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
36
54
Qgs
Gate-to-Source Charge
–––
12
18
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
13
20
td(on)
Turn-On Delay Time
–––
9.9
–––
tr
Rise Time
–––
61
–––
td(off)
Turn-Off Delay Time
–––
24
–––
ns
tf
Fall Time
–––
29
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2150
–––
Coss
Output Capacitance
–––
600
–––
pF
Crss
Reverse Transfer Capacitance
–––
54
–––
Coss
Output Capacitance
–––
2885
–––
Coss
Output Capacitance
–––
526
–––
Coss eff.
Effective Output Capacitance
g
–––
147
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
87
(Body Diode)
A
ISM
Pulsed Source Current
–––
350
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
65
98
ns
Qrr
Reverse Recovery Charge
–––
144
216
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, VDS = 1.0V, = 1.0MHz
VDS = 10V, ID = 52A
ID = 52A
VDS = 32V
VGS = 20V
VGS = -20V
VGS = 10V f
MOSFET symbol
VDD = 20V
ID = 52A
RG = 2.7
Ω
Conditions
VGS = 10V f
VGS = 0V
VDS = 25V
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 32V, = 1.0MHz
VDS = VGS, ID = 100μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 52A f
TJ = 25°C, IF = 52A
di/dt = 100A/μs
f
TJ = 25°C, IS = 52A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
相關(guān)PDF資料
PDF描述
AUIRF3710Z 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRF3504 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 87A TO-22 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 40V, 87A, TO-220AB
AUIRF3710Z 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 108mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF3710ZS 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF3710ZSTRL 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF3710ZSTRR 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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