參數(shù)資料
型號： AUIRF3504
元件分類： JFETs
英文描述： 87 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù)： 1/11頁
文件大小： 218K
代理商： AUIRF3504
AUIRF3504
HEXFET Power MOSFET
07/06/11
www.irf.com
1
PD - 97696
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
G
D
S
Gate
Drain
Source
TO-220AB
AUIRF3504
S
D
G
D
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed
up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
i
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
h
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.05
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Max.
87
61
350
199
See Fig. 12a, 12b, 15, 16
-55 to + 175
300
10 lbf
yin (1.1Nym)
143
0.95
± 20
368
V(BR)DSS
40V
RDS(on) typ. 7.8mΩ
max 9.2mΩ
ID
87A
相關PDF資料
PDF描述
AUIRF3710Z 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRF3710ZS 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF3710ZSTRR 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF3710ZSTRL 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF3805S-7P 160 A, 55 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
AUIRF3504 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 87A TO-22 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 40V, 87A, TO-220AB
AUIRF3710Z 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 108mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF3710ZS 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF3710ZSTRL 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF3710ZSTRR 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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