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參數(shù)資料
| 型號： | AUIRF3710Z |
| 元件分類： | JFETs |
| 英文描述： | 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 353K |
| 代理商： | AUIRF3710Z |
3/19/10
www.irf.com
1
AUIRF3710Z
AUIRF3710ZS
HEXFET Power MOSFET
S
D
G
VDSS = 100V
RDS(on) = 18mΩ
ID = 59A
Features
Low On-Resistance
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D2Pak
AUIRF3710ZS
TO-220AB
AUIRF3710Z
PD - 97470
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
mJ
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
k
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.92
°C/W
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient (PCB Mount, steady state)
–––
40
10 lbfin (1.1Nm)
160
1.1
± 20
170
200
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
Max.
59
42
240
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PDF描述 |
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| AUIRF3710ZS | 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF3710ZSTRR | 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF3710ZSTRL | 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF3805S-7P | 160 A, 55 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF3805S-7PTRR | 160 A, 55 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRF3710ZS | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF3710ZSTRL | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF3710ZSTRR | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF3805 | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF3805L | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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