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參數(shù)資料
| 型號(hào)： | AUIRF1324WL |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 240 A, 24 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-262 WIDELEAD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 238K |
| 代理商： | AUIRF1324WL |
05/12/11
www.irf.com
1
HEXFET Power MOSFET
AUIRF1324WL
GD
S
Gate
Drain
Source
Description
Specifically design for automotive applications this Widelead TO-
262 package part has the advantage of having over 50% lower
lead resistance and delivering over 20% lower Rds(on) when
compared with a traditional TO-262 package housing the same
silicon die. This greatly helps in reducing condition losses, achieving
higher current levels or enabling a system to run cooler and have
improved efficiency. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in
Automotive and other applications.
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 50% Lower Lead Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
PD - 97676
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
S
D
G
V(BR)DSS
24V
RDS(on) typ.
1.16mΩ
max.
1.30mΩ
ID (Silicon Limited)
382A c
ID (Package Limited)
240A
TO-262 WideLead
G
D
S
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited)
Single Pulse Avalanche Energy e
mJ
IAR
Avalanche Currentd
A
EAR
Repetitive Avalanche Energy
d
mJ
dv/dt
Peak Diode Recovery f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case j
–––
0.50
A
°C
°C/W
300 (1.6mm from case)
530
See Fig. 14, 15, 22a, 22b,
Max.
382
270
1530
240
300
1.3
-55 to + 175
± 20
2.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRF1324WL | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 24V 240A TO-2 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 24V, 240A, TO-2 |
| AUIRF1404 | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1404 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 160A TO-2 |
| AUIRF1404S | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1404S | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 75A TO-26 |
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