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參數(shù)資料
| 型號： | AUIRF1324 |
| 元件分類： | JFETs |
| 英文描述： | 195 A, 24 V, 0.0015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 432K |
| 代理商： | AUIRF1324 |
03/29/2010
www.irf.com
1
HEXFET Power MOSFET
GD
S
Gate
Drain
Source
PD - 97482
AUIRF1324
TO-220AB
AUIRF1324
S
D
G
VDSS
24V
RDS(on) typ.
1.2m
:
max.
1.5m
:
ID (Silicon Limited)
353Ac
ID (Package Limited)
195A
S
D
G
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switch-
ing speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
e
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.50
RθCS
Case-to-Sink, Flat Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
°C/W
-55 to + 175
Max.
353
249
1412
195
A
°C
10lb
xin (1.1Nxm)
300
0.46
± 20
2.0
270
See Fig. 14, 15, 22a, 22b
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRF1324L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET |
| AUIRF1324S | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1324S-7P | 功能描述:MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1324S-7PTRL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET |
| AUIRF1324S-7PTRR | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET |
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