參數(shù)資料
型號： AUIRF7304Q
元件分類： JFETs
英文描述： 4.3 A, 20 V, 0.09 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： ROHS COMPLIANT, SOP-8
文件頁數(shù)： 1/11頁
文件大?。?/td> 212K
代理商： AUIRF7304Q
HEXFET Power MOSFET
04/04/11
AUIRF7304Q
www.irf.com
1
PD - 97653
AUTOMOTIVE GRADE
Features
l
Advanced Planar Technology
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Low On-Resistance
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Dual P Channel MOSFET
l
Dynamic dV/dT Rating
l
Logic Level
l
150°C Operating Temperature
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Fast Switching
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Lead-Free, RoHS Compliant
l
Automotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
SO-8
AUIRF7304Q
D1
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter
Units
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ -4.5V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
A
ID @ TA = 70°C
Continuous Drain Current, VGS @ -4.5V
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
e
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery dv/dt
g
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
fg
–––
62.5
°C/W
Max.
-4.7
-4.3
-17
-3.4
-55 to + 150
2.0
0.016
-5.0
± 12
V(BR)DSS
-20V
RDS(on) max.
0.090
Ω
ID
-4.3A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRF7304QTR 功能描述:MOSFET AUTO -20V 1 N-CH HEXFET 90mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7309Q 功能描述:MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7309QTR 功能描述:MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7313Q 功能描述:MOSFET Dual N-Ch 30V 6.5A Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7313QTR 功能描述:MOSFET Dual N-Ch 30V 6.5A Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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