參數(shù)資料
型號(hào): AU5790D14-T
英文描述: LAN TRANSCEIVER|SINGLE|SOP|14PIN|PLASTIC
中文描述: 網(wǎng)絡(luò)收發(fā)器|單|??苵 14PIN |塑料
文件頁(yè)數(shù): 6/19頁(yè)
文件大小: 165K
代理商: AU5790D14-T
Philips Semiconductors
Preliminary specification
AU5790
Single wire CAN transceiver
6
ABSOLUTE MAXIMUM RATINGS
According to the IEC 134 Absolute Maximum System: operation is not guaranteed under these conditions; all voltages are referenced to
pin 8 (GND); positive currents flow into the IC, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VBAT
VBATld
Supply voltage
Steady state
–0.3
+27
V
Short-term supply voltage
Load dump; ISO7637/1 test pulse 5
(SAE J1113, test pulse 5), T < 1s
+45
V
VBATtr2
Transient supply voltage
ISO 7637/1 test pulse 2 (SAE J1113,
test pulse 2), with series diode and
bypass cap of 100 nF between BAT and
GND pins, Note 2.
+100
V
VBATtr3
Transient supply voltage
ISO 7637/1 pulses 3a and 3b
(SAE J1113 test pulse 3a and 3b),
Note 2.
–150
+100
V
VCANH_1
V
CANH_0
VCANHtr1
VCANHtr2
VCANHtr3
CANH voltage
V
BAT
> 2 V
–10
+18
V
CANH voltage
V
BAT
< 2 V
–16
+18
V
Transient bus voltage
ISO 7637/1 test pulse 1, Notes 1 and 2
–100
V
Transient bus voltage
ISO 7637/1 test pulse 2, Notes 1 and 2
+100
V
Transient bus voltage
ISO 7637/1 test pulses 3a, 3b,
Notes 1 and 2
–150
+100
V
V
RTH1
Pin RTH voltage
V
BAT
> 2 V, voltage applied to pin RTH
via a 2 k
series resistor
V
BAT
< 2 V, voltage applied to pin RTH
via a 2 k
series resistor
–10
+18
V
V
RTH0
Pin RTH voltage
–16
+18
V
VI
ESDBAHB
DC voltage on pins TxD, EN, RxD, NSTB
–0.3
+7
V
ESD capability of pin BAT
Direct contact discharge,
R=1.5 k
, C=100 pF
Direct contact discharge,
R=1.5 k
, C=100 pF
Direct contact discharge,
R=1.5 k
+ 3 k
, C=100 pF
Direct contact discharge,
R=1.5 k
, C=100 pF
–8
+8
kV
ESD
CHHB
ESD capability of pin CANH
–8
+8
kV
ESD
RTHB
ESD capability of pin RTH
–8
+8
kV
ESD
LGHB
ESD capability of pins TxD, NSTB, EN, RxD
–2
+2
kV
R
Tmin
Bus load resistance R
T
being connected to pin
RTH
2
k
Tamb
Tstg
Tvj
NOTES:
1. Test pulses are coupled to CANH through a series capacitance of 1 nF.
2. Rise time for test pulse 1: t
r
< 1
μ
s; pulse 2: t
r
< 100 ns; pulses 3a/3b: t
r
< 5 ns.
Operating ambient temperature
–40
+125
°
C
°
C
Storage temperature
–40
+150
Junction temperature
–40
+150
°
C
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