參數(shù)資料
型號(hào)： ATF-551M4-TR2
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號(hào)晶體管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4
文件頁數(shù)： 7/23頁
文件大?。?/td> 183K
代理商： ATF-551M4-TR2
15
ATF-551M4 Typical Scattering Parameters,
VDS = 3V, IDS = 15 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.995
-6.5
22.02
12.623
175.6
0.005
86.0
0.802
-3.1
34.02
0.5
0.949
-31.2
21.51
11.900
156.9
0.025
71.0
0.754
-14.6
26.78
0.9
0.894
-54.1
20.79
10.958
142.3
0.041
60.1
0.700
-25.4
24.27
1.0
0.882
-59.4
20.59
10.701
138.9
0.045
57.6
0.682
-27.8
23.76
1.5
0.813
-84.0
19.41
9.341
123.3
0.059
46.7
0.599
-38.1
22.00
1.9
0.768
-101.2
18.38
8.301
112.7
0.066
39.7
0.537
-44.5
21.00
2.0
0.758
-105.1
18.14
8.068
110.3
0.067
38.1
0.522
-45.9
20.81
2.5
0.717
-123.1
16.90
6.996
99.2
0.073
31.6
0.459
-52.0
19.82
3.0
0.690
-138.7
15.74
6.120
89.7
0.076
26.7
0.407
-56.9
19.06
4.0
0.668
-163.5
13.68
4.829
73.6
0.080
20.0
0.334
-65.0
17.81
5.0
0.666
177.5
11.93
3.947
59.9
0.082
15.8
0.286
-73.3
16.82
6.0
0.668
164.4
10.53
3.363
48.5
0.084
14.2
0.250
-78.4
16.02
7.0
0.670
152.3
9.31
2.921
37.5
0.087
12.9
0.232
-87.6
14.96
8.0
0.672
142.4
8.32
2.607
27.0
0.092
11.8
0.218
-97.7
12.99
9.0
0.681
131.7
7.43
2.351
16.4
0.098
10.4
0.209
-110.0
12.01
10.0
0.678
118.6
6.62
2.142
5.3
0.104
7.8
0.209
-122.9
10.90
11.0
0.684
105.8
5.89
1.970
-5.5
0.113
4.9
0.215
-135.4
10.28
12.0
0.690
91.8
5.19
1.817
-16.8
0.122
0.7
0.226
-147.1
9.70
13.0
0.707
81.3
4.44
1.667
-27.6
0.132
-3.7
0.221
-160.3
9.23
14.0
0.744
66.6
3.75
1.540
-39.5
0.142
-10.0
0.211
-179.5
9.62
15.0
0.751
55.2
2.93
1.401
-50.7
0.151
-16.4
0.218
159.7
8.26
16.0
0.807
45.3
1.97
1.254
-61.4
0.157
-22.8
0.236
137.8
9.02
17.0
0.824
37.3
1.01
1.123
-71.9
0.163
-29.5
0.277
114.5
8.38
18.0
0.874
31.1
0.02
1.002
-82.0
0.167
-36.2
0.330
95.0
7.78
Freq
Fmin
Γ
opt
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.18
0.63
-6.3
0.12
24.41
0.9
0.19
0.56
6.8
0.12
22.45
1.0
0.23
0.51
10.0
0.11
22.29
1.9
0.39
0.46
36.5
0.10
18.75
2.0
0.35
0.44
40.8
0.10
18.61
2.4
0.42
0.39
50.1
0.10
17.46
3.0
0.49
0.31
72.5
0.08
16.42
3.9
0.56
0.27
104.4
0.07
14.80
5.0
0.66
0.29
146.9
0.06
13.48
5.8
0.83
0.33
167.4
0.05
12.58
6.0
0.84
0.33
169.0
0.05
12.38
7.0
0.94
0.35
-166.9
0.06
11.49
8.0
1.05
0.40
-152.7
0.07
10.77
9.0
1.19
0.46
-138.6
0.09
10.23
10.0
1.40
0.44
-121.9
0.16
9.32
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters,
VDS = 3V, IDS = 15 mA
40
30
20
10
0
-10
Figure 33. MSG/MAG and |S21|
2 vs.
Frequency at 3V, 15 mA.
FREQUENCY (GHz)
020
10
515
MSG/MAG
and
|S
21
|
2 (dB)
|S21|
2
MAG
MSG
相關(guān)PDF資料
PDF描述
ATF-551M4-TR1G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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