參數(shù)資料
型號(hào): ATF-551M4-TR2
廠商: AGILENT TECHNOLOGIES INC
元件分類: 小信號(hào)晶體管
英文描述: X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4
文件頁(yè)數(shù): 17/23頁(yè)
文件大小: 183K
代理商: ATF-551M4-TR2
3
ATF-551M4 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 2.7V, Ids = 10 mA
V
0.3
0.47
0.65
Vth
Threshold Voltage
Vds = 2.7V, Ids = 2 mA
V
0.18
0.37
0.53
Idss
Saturated Drain Current
Vds = 2.7V, Vgs = 0V
A
0.1
3
Gm
Transconductance
Vds = 2.7V, gm =
Idss/Vgs;
mmho
110
220
285
Vgs = 0.75 – 0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = -2.7V
A—
95
NF
Noise Figure [1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
dB
0.5
0.9
Vds = 3V, Ids = 20 mA
dB
0.5
Gain
Gain [1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
dB
15.5
17.5
18.5
Vds = 3V, Ids = 20 mA
dB
18.0
OIP3
Output 3rd Order
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
dBm
22
24.1
Intercept Point [1]
Vds = 3V, Ids = 20 mA
dBm
30.0
P1dB
1dB Compressed
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
dBm
14.6
Output Power [1]
Vds = 3V, Ids = 20 mA
dBm
16.0
Notes:
1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts from
4 wafers.
Input
50
Input
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.3
Γ_ang = 11°
(0.3 dB loss)
Output
Matching Circuit
Γ_mag = 0.3
Γ_ang = 9°
(0.9 dB loss)
DUT
50
Output
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a
trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-
embedded from actual measurements.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Fmin
Minimum Noise Figure [2]
f = 900 GHz
Vds = 2.7V, Ids = 10 mA
dB
0.27
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
dB
0.41
f = 3.9 GHz
Vds = 2.7V, Ids = 10 mA
dB
0.61
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
dB
0.88
Ga
Associated Gain [2]
f = 900 GHz
Vds = 2.7V, Ids = 10 mA
dB
21.8
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
dB
17.9
f = 3.9 GHz
Vds = 2.7V, Ids = 10 mA
dB
14.2
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
dB
12.0
OIP3
Output 3rd Order
f = 900 GHz
Vds = 2.7V, Ids = 10 mA
dBm
22.1
Intercept Point [3]
f = 3.9 GHz
Vds = 2.7V, Ids = 10 mA
dBm
24.3
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
dBm
24.5
P1dB
1dB Compressed
f = 900 GHz
Vds = 2.7V, Ids = 10 mA
dBm
14.3
Output Power [3]
f = 3.9 GHz
Vds = 2.7V, Ids = 10 mA
dBm
14.5
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
dBm
14.3
Notes:
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
ATF-551M4 Electrical Specifications (see notes 2 and 3, as indicated)
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