參數(shù)資料
型號： ATF-551M4-TR2
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號晶體管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4
文件頁數(shù)： 6/23頁
文件大?。?/td> 183K
代理商： ATF-551M4-TR2
14
ATF-551M4 Typical Scattering Parameters,
VDS = 3V, IDS = 10 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.996
-5.9
20.49
10.578
176.0
0.006
86.1
0.835
-2.8
32.46
0.5
0.957
-28.4
20.05
10.059
158.5
0.027
72.0
0.792
-13.4
25.71
0.9
0.909
-49.6
19.48
9.420
144.8
0.045
61.5
0.747
-23.5
23.21
1.0
0.899
-54.6
19.32
9.246
141.6
0.049
59.1
0.730
-25.9
22.76
1.5
0.836
-78.1
18.32
8.241
126.3
0.065
47.9
0.653
-36.1
21.03
1.9
0.792
-94.9
17.41
7.424
115.7
0.074
40.3
0.593
-42.7
20.01
2.0
0.782
-98.8
17.20
7.241
113.2
0.075
38.6
0.578
-44.2
19.85
2.5
0.740
-116.8
16.07
6.360
101.9
0.082
31.3
0.513
-50.7
18.90
3.0
0.709
-132.8
14.99
5.616
91.9
0.086
25.3
0.458
-56.0
18.15
4.0
0.680
-158.5
13.03
4.481
75.1
0.090
16.9
0.378
-64.9
16.97
5.0
0.675
-178.4
11.33
3.684
60.9
0.091
11.3
0.325
-73.5
16.07
6.0
0.675
167.8
9.96
3.146
49.1
0.092
8.7
0.287
-79.1
15.34
7.0
0.676
155.1
8.75
2.738
37.6
0.093
6.6
0.267
-88.4
14.69
8.0
0.678
144.9
7.77
2.447
26.8
0.095
5.4
0.252
-98.6
12.90
9.0
0.686
133.8
6.88
2.209
16.0
0.099
4.1
0.242
-110.5
11.73
10.0
0.682
120.5
6.09
2.015
4.7
0.104
2.1
0.241
-122.9
10.56
11.0
0.688
107.5
5.37
1.855
-6.3
0.110
0.0
0.247
-135.1
9.88
12.0
0.694
93.3
4.67
1.711
-17.8
0.118
-3.4
0.256
-146.5
9.26
13.0
0.711
82.4
3.92
1.571
-28.8
0.127
-6.9
0.250
-159.0
8.76
14.0
0.746
67.5
3.24
1.452
-40.8
0.137
-12.6
0.240
-176.5
8.90
15.0
0.753
55.9
2.41
1.320
-52.4
0.146
-18.5
0.246
163.0
7.74
16.0
0.807
45.8
1.46
1.183
-63.1
0.152
-24.5
0.260
142.0
8.91
17.0
0.826
37.6
0.48
1.057
-73.7
0.159
-30.8
0.297
119.0
8.23
18.0
0.874
31.3
-0.53
0.941
-84.1
0.164
-37.5
0.349
98.9
7.59
Freq
Fmin
Γ
opt
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.23
0.65
-4.3
0.14
23.81
0.9
0.24
0.58
7.4
0.13
21.82
1.0
0.26
0.54
10.7
0.13
21.62
1.9
0.43
0.50
36.2
0.11
18.05
2.0
0.38
0.48
40.4
0.12
17.96
2.4
0.43
0.44
49.8
0.11
16.84
3.0
0.51
0.36
69.2
0.10
15.76
3.9
0.59
0.31
99.4
0.08
14.23
5.0
0.70
0.32
139.3
0.06
12.94
5.8
0.85
0.35
160.3
0.05
12.04
6.0
0.86
0.35
162.3
0.05
11.85
7.0
0.98
0.36
-173.7
0.06
10.99
8.0
1.09
0.41
-158.6
0.07
10.29
9.0
1.23
0.45
-143.7
0.09
9.71
10.0
1.45
0.44
-126.8
0.15
8.88
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters,
VDS = 3V, IDS = 10 mA
40
30
20
10
0
-10
Figure 32. MSG/MAG and |S21|
2 vs.
Frequency at 3V, 10 mA.
FREQUENCY (GHz)
020
10
515
MSG/MAG
and
|S
21
|
2 (dB)
|S21|
2
MAG
MSG
相關(guān)PDF資料
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ATF-551M4-TR1G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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