參數(shù)資料
型號(hào)： ATF-55143-TR2G
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： LEAD FREE, PLASTIC, SC-70, 4 PIN
文件頁(yè)數(shù)： 20/21頁(yè)
文件大?。?/td> 235K
代理商： ATF-55143-TR2G
8
ATF-55143 Typical Scattering Parameters,
VDS = 2V, IDS = 15 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.997
-7.1
22.33
13.074
174.4
0.006
85.7
0.752
-4.6
33.38
0.5
0.953
-34.5
21.82
12.333
153.0
0.027
69.4
0.712
-22.1
26.60
0.9
0.873
-58.8
20.86
11.042
134.4
0.044
56.3
0.654
-36.7
24.00
1.0
0.856
-64.6
20.58
10.693
130.3
0.047
53.3
0.636
-39.6
23.57
1.5
0.759
-89.3
19.14
9.059
112.2
0.060
41.6
0.560
-51.8
21.79
1.9
0.695
-106.2
18.06
7.998
100.0
0.068
34.4
0.509
-59.0
20.70
2.0
0.681
-110.2
17.8
7.762
97.2
0.070
32.8
0.498
-60.5
20.45
2.5
0.621
-129.3
16.62
6.773
83.9
0.076
25.6
0.443
-67.5
19.50
3.0
0.578
-147.4
15.54
5.985
71.8
0.082
19.4
0.390
-73.6
18.63
4.0
0.536
177.3
13.71
4.850
49.4
0.091
7.9
0.295
-87.3
17.27
5.0
0.541
145.1
12.09
4.020
28.4
0.096
-3.0
0.225
-104.3
16.22
6.0
0.554
119.1
10.59
3.384
9.0
0.101
-12.7
0.183
-120.8
13.89
7.0
0.574
97.0
9.3
2.917
-9.1
0.105
-23.0
0.150
-138.4
12.18
8.0
0.594
75.5
8.13
2.549
-27.0
0.106
-33.1
0.101
-149.7
10.73
9.0
0.63
55.9
7.12
2.271
-44.6
0.113
-40.4
0.047
-175.2
9.87
10.0
0.703
37.3
6.14
2.028
-63.5
0.121
-53.2
0.078
82.0
9.69
11.0
0.757
21.1
4.92
1.762
-81.7
0.123
-65.3
0.162
51.1
9.12
12.0
0.793
7.1
3.79
1.547
-98.5
0.125
-76.9
0.231
31.3
8.52
13.0
0.818
-8.2
2.77
1.376
-115.9
0.125
-89.5
0.275
12.8
7.92
14.0
0.841
-23.8
1.76
1.225
-134.3
0.125
-102.7
0.339
-5.5
7.38
15.0
0.863
-38.1
0.32
1.038
-152.5
0.118
-116.3
0.438
-21.0
6.54
16.0
0.856
-51.2
-1.29
0.862
-168.8
0.111
-128.0
0.524
-32.0
4.99
17.0
0.871
-60.2
-2.66
0.736
177.0
0.109
-138.6
0.586
-44.4
4.38
18.0
0.913
-70.4
-3.8
0.646
161.7
0.105
-151.9
0.636
-58.1
5.20
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.21
0.627
18.7
0.1
25.41
0.9
0.25
0.56
23.6
0.1
23.47
1.0
0.26
0.53
27.3
0.1
23.02
1.9
0.4
0.51
49.7
0.09
19.44
2.0
0.41
0.5
52.6
0.09
19.09
2.4
0.48
0.41
62.3
0.09
17.81
3.0
0.57
0.35
80.4
0.08
16.17
3.9
0.7
0.22
118.4
0.06
14.25
5.0
0.86
0.2
-176.5
0.06
12.6
5.8
0.99
0.23
-140.5
0.08
11.77
6.0
1.03
0.23
-134.6
0.08
11.6
7.0
1.16
0.29
-99.3
0.14
10.86
8.0
1.35
0.35
-69.3
0.25
10.22
9.0
1.49
0.43
-47.9
0.39
9.48
10.0
1.62
0.54
-30.8
0.57
8.47
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters,
VDS = 2V, IDS = 15 mA
Figure 27. MSG/MAG and |S21|
2 vs.
Frequency at 2V, 15 mA.
MSG
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
020
10
515
40
35
30
25
20
15
10
5
0
-5
-10
|S21|
2
MAG
相關(guān)PDF資料
PDF描述
ATF-55143-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-TR2G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-551M4 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-551M4-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-551M4-BLK 制造商:Avago Technologies 功能描述:Transistor
ATF-551M4-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-551M4-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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