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| 型號(hào)： | ATF-55143-TR2G |
| 廠(chǎng)商： | AGILENT TECHNOLOGIES INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 18/21頁(yè) |
| 文件大?。?/td> | 235K |
| 代理商： | ATF-55143-TR2G |
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ATF-55143 Typical Performance Curves, continued
IIP3
(dBm)
Figure 21. Gain vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1]
FREQUENCY (GHz)
GAIN
(dB)
06
2
14
5
3
28
23
18
13
8
25
°C
-40
°C
85
°C
Figure 23. OIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1]
FREQUENCY (GHz)
OIP3
(dBm)
06
2
14
5
3
25
°C
-40
°C
85
°C
25
24
23
22
21
20
19
Figure 24. IIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1]
FREQUENCY (GHz)
06
2
14
5
3
25
°C
-40
°C
85
°C
16
14
12
10
8
6
4
2
0
-2
-4
-6
Figure 25. P1dB vs. Temperature and
Frequency with bias at 2.7V, 10 mA.[1,2]
FREQUENCY (GHz)
P1dB
(dBm)
06
2
14
5
3
25
°C
-40
°C
85
°C
16
15
14
13
12
11
10
Figure 22. Fmin vs. Frequency and
Temperature at 2.7V, 10 mA.
FREQUENCY (GHz)
Fmin
(dB)
06
2
14
5
3
2.0
1.5
1.0
0.5
0
25
°C
-40
°C
85
°C
Notes:
1. Measurements at 2 GHz were made on a
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
requirements. Measurements taken above
and below 2 GHz were made using a double
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
2. P1dB measurements are performed with
passive biasing. Quiescent drain current, Idsq,
is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or
decrease depending on frequency and dc bias
point. At lower values of I
dsq, the device is
running close to class B as power output
approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a
constant current source as is typically done
with active biasing. As an example, at a V
DS =
2.7V and Idsq = 5 mA, Id increases to 15 mA as
a P1dB of +14.5 dBm is approached.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-55143-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-551M4 | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-551M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4-BLK | 制造商:Avago Technologies 功能描述:Transistor |
| ATF-551M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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